BLF145,112 datasheet by NXP Semiconductors

Description HF power MOS transistor - Application: Broadcast and HF Communication transmitters ; Description: HF VDMOS RF POWER Transistor ; Efficiency: 40 %; Frequency: 0 - 28 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 27 dB; Package: SOT123A (CRFM4); Container: Blister pack
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Obsolete
Price & Stock
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BLF145

BLF145,112 datasheet preview

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